| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
61 pcs
|
61 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT53E768M32D4DT-053 AAT:E is a high-performance DRAM component designed for demanding applications. It offers a substantial memory capacity of 24 Gbit, enabling efficient data handling and processing.
The component operates at a clock frequency of 1.866 GHz, ensuring rapid data access and transfer speeds. Its low operating voltage of 1.1V contributes to power efficiency, making it suitable for mobile and power-sensitive systems. The technology utilized is SDRAM - Mobile LPDDR4, indicating its suitability for mobile and embedded computing platforms.
Packaged in a compact 200-VFBGA (10x14.5) format, this DRAM component is designed for surface mounting. The operating temperature range of -40°C to 125°C (TC) allows for reliable performance in various environmental conditions. Its memory organization is 768M x 32, providing a flexible configuration for different memory architectures.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24 Gbit.
Volatile DRAM, specifically SDRAM - Mobile LPDDR4.
768M x 32.
1.866 GHz.
1.1 V.
-40°C to 125°C (TC).
200-VFBGA surface mount package, 10x14.5 mm.