| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,600 pcs
|
15600 pcs | On Request | 1 | On Request | On Request | 24+23+ | On Request | On Request | |
|
9,520 pcs
|
9520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Write Cycle Time |
The MT53E512M32D1ZW-046 AAT:B is a LPDDR4 SDRAM memory integrated circuit manufactured by Micron Technology. This component offers a substantial 16 Gbit memory size, organized as 512M x 32 bits, providing ample storage capacity for demanding applications.
Key electrical specifications include a high clock frequency of 2.133 GHz and a fast access time of 3.5 ns, ensuring efficient data retrieval. The device operates within a supply voltage range of 1.06V to 1.17V, characteristic of LPDDR4 technology. Its write cycle time is rated at 18 ns for word and page operations.
Designed for surface mounting, the MT53E512M32D1ZW-046 AAT:B comes in a 200-TFBGA package with dimensions of 10x14.5 mm. The operating temperature range is -40°C to 105°C (TC), making it suitable for various environmental conditions. This memory IC is classified as Volatile DRAM and utilizes a parallel memory interface.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
16 Gbit.
2.133 GHz.
1.06V to 1.17V.
-40°C to 105°C (TC).
200-TFBGA (10x14.5 mm).
512M x 32.
3.5 ns.