| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,440 pcs
|
5440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,440 pcs
|
5440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Clock Frequency | |
| Memory Format | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Operating Temperature | |
| Technology | |
| Voltage |
This Micron Technology MT53E256M16D1DS-046 AAT:B is a volatile DRAM memory component with a capacity of 4Gbit. It utilizes SDRAM - Mobile LPDDR4 technology and operates at a clock frequency of 2.133 GHz.
The memory organization is 256M x 16, and it requires an operating voltage of 1.1V. The component is designed for a temperature range of -40°C to 105°C (TC).
This part is classified under the Memory category and is suitable for applications requiring high-speed data storage and retrieval. Its specifications make it a candidate for use in various electronic devices where efficient memory performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.1V
-40°C to 105°C (TC)
4Gbit
2.133 GHz
Volatile
Mobile LPDDR4 SDRAM
256M x 16