| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MT53E128M32D2DS-053AUT:A from Micron Technology Inc. is a 4 Gigabit (4096Mb) volatile DRAM memory IC utilizing Mobile LPDDR4 SDRAM technology. It is organized as 128M x 32 bits and operates at a high clock frequency of 1.866 GHz, making it suitable for high-speed data access.
This memory IC requires a supply voltage of 1.1V and operates within a temperature range of -30°C to 85°C. It is housed in a compact 200-WFBGA package, designed for surface mounting, and is suitable for applications requiring high-density storage in compact devices.
The MT53E128M32D2DS-053AUT:A is ideal for use in smartphones, tablets, mobile computing devices, embedded systems, and other small-form-factor electronics that demand fast, low-power memory solutions. Its specifications align with consumer, industrial, and communication device requirements where rapid access and energy efficiency are critical.
Compliance information includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 3. The REACH status is unaffected. The ECCN is EAR99 and HTSUS code is 8542.32.0036.
The MT53E128M32D2DS-053AUT:A is a Volatile DRAM memory with Mobile LPDDR4 SDRAM technology.
This memory IC has a size of 4 Gbit and is organized as 128M x 32.
The clock frequency can reach up to 1.866 GHz.
The supply voltage required is 1.1V.
The operating temperature range is from -30°C to 85°C.
It uses a 200-WFBGA package designed for surface mounting.