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MT4LC1M16C3TG-6 The Micron Technology MT4LC1M16C3TG-6 is a 1 Meg x 16 FPM DRAM. It features specific electrical timing characteristics crucial for memory operations.
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MT4LC1M16C3TG-6

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology MT4LC1M16C3TG-6 is a 1 Meg x 16 FPM DRAM. It features specific electrical timing characteristics crucial for memory operations.
✓ Total Stock: 9,043 pcs
$ Price Range: $1.28

MT4LC1M16C3TG-6 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
9,040 pcs
On Request
9040 pcs On Request 1 On Request On Request On Request On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request 2000 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MT4LC1M16C3TG-6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MT4LC1M16C3TG-6 Description

Short technical summary and product information.

The MT4LC1M16C3TG-6 from Micron Technology is a 1 Meg x 16 Fast Page Mode (FPM) Dynamic Random-Access Memory (DRAM). This component is designed for memory applications requiring specific timing parameters.

 

Key electrical characteristics include a RAS# to WE# delay time ranging from 67 to 79 ns, and a WRITE command to RAS# lead time between 13 and 15 ns. The transition time for signals is a maximum of 2 ns. WRITE command hold times are specified at 50 ns, with a hold time referenced to RAS# between 8 and 10 ns. The WE# command setup time is between 38 and 45 ns, and the WRITE command pulse width is 0 ns. Additionally, the WE# hold time during CBR Refresh is 5 ns, and the WE# setup time during CBR Refresh is between 8 and 10 ns.

 

This FPM DRAM offers a memory organization of 1 Megabit by 16 bits, providing a total capacity suitable for various embedded systems and memory expansion needs. Further details regarding operating voltage, temperature ranges, and package type would typically be found in the manufacturer's datasheet.

MT4LC1M16C3TG-6 Quick Information

Product Type: DRAM
Series: MT4LC
Canonical Name: Micron Technology MT4LC1M16C3TG-6 1 Meg x 16 FPM DRAM
Subcategory: DRAM

MT4LC1M16C3TG-6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MT4LC1M16C3TG-6 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

MT4LC1M16C3TG-6 Features

  • 1 Meg x 16 FPM DRAM memory organization.
  • RAS# to WE# delay time: 67-79 ns.
  • WRITE command to RAS# lead time: 13-15 ns.
  • Transition time (rise or fall): 2 ns.
  • WRITE command hold time: 50 ns.

MT4LC1M16C3TG-6 Applications

  • Suitable for memory expansion needs.
  • Used in embedded systems.
  • Designed for specific timing requirements.
  • FPM DRAM for legacy systems.

MT4LC1M16C3TG-6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the MT4LC1M16C3TG-6?

1 Megabit x 16 (1Mx16).

What is the RAS# to WE# delay time?

67-79 ns.

What is the WRITE command to RAS# lead time?

13-15 ns.

What is the transition time (rise or fall)?

2 ns.

What is the WRITE command hold time?

50 ns.

What is the WE# command setup time?

38-45 ns.

What is the WE# hold time for CBR Refresh?

5 ns.

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