| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,616 pcs
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3616 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology MT49H8M36BM-33:B is a high-performance 288Mbit DRAM memory integrated circuit. It features a parallel interface and operates at a clock frequency of 300 MHz, providing a data rate of 1.067 Gb/s/pin and a peak bandwidth of 38.4 Gb/s for x36 configurations.
This RLDRAM 2 component offers a reduced cycle time of 15ns at 533 MHz and a fast access time of 20 ns. It is organized as 8M x 36 and utilizes 8 internal banks for concurrent operation. The device supports a programmable read latency and balanced read/write latencies to optimize data bus utilization.
Designed for surface mounting, the MT49H8M36BM-33:B comes in a 144-ball µBGA package (18.5x11 mm). It operates within a voltage range of 1.7V to 1.9V for VDD and 1.5V or 1.8V for I/O, with a core voltage of 1.8V and an auxiliary voltage of 2.5V. The operating temperature range is 0°C to 95°C (TC).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 1.7V to 1.9V.
It is available in a 144-ball µBGA (18.5x11 mm) package, also listed as 144-TFBGA.
The operating temperature range is 0°C to 95°C (case temperature).
The clock frequency is 300 MHz.
It has 288 Mbit memory organized as 8M x 36.
It uses RLDRAM 2 (Reduced Latency DRAM 2) technology.
The data rate is 1.067 Gb/s per pin (DDR at 533 MHz).