BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11,300 pcs
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11300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade |
The Micron Technology MT48V4M32LFF5-8IT:G is a high-performance Synchronous DRAM designed for various electronic applications. It offers a memory density of 1.34E8 degrees and a capacity of 4.19E6 words.
This component operates with a nominal supply voltage of 2.5V, with a maximum rating of 2.7V. The operating temperature range is from -40°C to 85°C, making it suitable for industrial environments. The device features a PBGA90 package with a terminal pitch of 0.8000 mm and a tin-lead-silver terminal finish.
Key specifications include a FOUR BANK PAGE BURST access mode and a rectangular package shape with a plastic/epoxy body material. The part is currently active and has one function.
This DRAM is ideal for systems requiring reliable memory solutions within a specified voltage and temperature range. Its robust construction and defined specifications make it a suitable choice for industrial automation and process automation applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory density is 1.34E8 degrees.
The nominal supply voltage is 2.5V, with a maximum of 2.7V.
It operates from -40°C to 85°C.
It uses a PBGA90 package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.