MT47H128M16HG—3IT

The MT47H128M16HG-3IT from Micron Technology is a DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) component. It utilizes a double data rate architecture with a 4n-prefetch capability to achieve high-speed operation. This design allows for the transfer of two data words per clock cycle at the I/O balls.

A single read or write access involves a single 4n-bit-wide clock cycle transfer at the internal DRAM core and four corresponding n-bit-wide half-clock-cycle transfers at the I/O balls. A bidirectional data strobe (DQS, DQS#) is used for data capture at the receiver. For the x16 variant, two data strobes are provided: one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS, UDQS#).

This component operates within specified voltage ranges, with VDD supply voltage up to 2.3V relative to VSS. VDDQ and VDDL voltages also range up to 2.3V relative to their respective VSSQ and VSSL. The voltage on any ball (VIN, VOUT) relative to VSS is also within -0.5V to 2.3V.

The MT47H128M16HG-3IT is packaged in a Ball Grid Array (BGA) format. Its Moisture Sensitivity Level (MSL) is rated as 1, indicating unlimited shelf life under recommended conditions. The REACH status is unaffected.