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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MT46V32M16TG-6TF is a 512Mb DDR SDRAM component manufactured by Micron Technology. This specific configuration is 32 Meg x 16, organized into 4 internal banks for concurrent operation. It features a double data rate architecture, allowing for two data accesses per clock cycle.
The device operates with a VDD supply voltage of +2.5V ±0.2V and VDDQ of +2.5V ±0.2V. It supports clock rates up to 200MHz (DDR400B) with a CAS latency of 3, and other speeds like 167MHz (DDR333) and 133MHz (DDR266) are also available depending on the specific timing grade. Programmable burst lengths of 2, 4, or 8 are supported.
Key features include a bidirectional data strobe (DQS) for source-synchronous data capture and 2.5V I/O compatibility (SSTL_2). Auto refresh is available with a 64ms, 8192-cycle rate for commercial and industrial applications. The component is available in a TSOP package, suitable for surface mounting.
This DDR SDRAM is designed for applications requiring high-speed memory, such as in computing, networking, and embedded systems. Its features facilitate efficient data transfer and system performance.
The standard operating voltage is 2.5V for VDD and VDDQ, with a tolerance of ±0.2V. For DDR400 operation, the voltage is 2.6V ±0.1V.
It is available in a TSOP package.
Commercial grade: 0°C to +70°C. Industrial grade: -40°C to +85°C. Automotive grade: -40°C to +105°C.
32 Meg x 16 (8 Meg x 16 x 4 banks).
It supports 200MHz at CL=3 (DDR400B), 167MHz at CL=2.5 (DDR333), and 133MHz at CL=2 or CL=2.5 (DDR266).
Programmable burst lengths of 2, 4, or 8.
Auto refresh: 64ms, 8192-cycle for commercial and industrial grades; 16ms, 8192-cycle for automotive grade.