| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | 0920 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Data Rate | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Memory Size | |
| Memory Type | |
| Military Grade | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The Micron Technology MT46V32M16P-6TF is a 512Mb Double Data Rate (DDR) Synchronous Dynamic Random-Access Memory (SDRAM) component. It supports x4, x8, and x16 data bus widths, offering flexibility for various system designs.
This DDR SDRAM features a core voltage (VDD) and I/O voltage (VDDQ) of 2.5V ±0.2V, with an option for 2.6V ±0.1V for DDR400 speeds. It incorporates an internal, pipelined DDR architecture, enabling two data accesses per clock cycle. The component includes a bidirectional data strobe (DQS) for source-synchronous data capture and differential clock inputs (CK and CK#).
Available in a 66-pin TSOP or a 60-ball FBGA package, the MT46V32M16P-6TF supports programmable burst lengths of 2, 4, or 8. It also features auto-refresh cycles with options for commercial, industrial, and automotive temperature ratings. The device is designed for applications requiring high-speed memory access and efficient data transfer.
Key electrical specifications include various clock rates from 133MHz to 200MHz depending on the CAS latency (CL) and speed grade. Cycle times range from 5ns to 7.5ns. The component also specifies DQS-DQ skew values to ensure data integrity.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
512Mb.
DDR.
66-pin TSOP and 60-ball FBGA.
2.5V nominal (VDD and VDDQ), with 2.6V for DDR400 operation.
The -6TF variant supports clock speeds up to 167MHz (DDR333) with a cycle time of 6ns at CL=2.5.
32 Meg x 16 (8 Meg x 16 x 4 banks).
Programmable burst lengths of 2, 4, or 8.