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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The MT46V32M16P-6T.F is a Double Data Rate (DDR) Synchronous Dynamic Random-Access Memory (SDRAM) component manufactured by Micron Technology (MT). This component operates with a supply voltage (VDD) of +2.5V ±0.2V and VDDQ of +2.5V ±0.2V. For DDR400 speeds, the voltage can be +2.6V ±0.1V.
Key features include an internal, pipelined DDR architecture allowing two data accesses per clock cycle, differential clock inputs (CK and CK#), and a bidirectional data strobe (DQS) for source-synchronous data capture. It supports programmable burst lengths of 2, 4, or 8. The device includes four internal banks for concurrent operation and features a DLL to align DQ and DQS transitions with CK.
Available in a 66-pin TSOP (Pb-free) package or a 60-ball FBGA (10mm x 12.5mm) package (also available in Pb-free), this DDR SDRAM is suitable for various applications requiring high-speed memory. It supports auto refresh cycles with different timings for commercial, industrial, and automotive temperature ranges.
The operating voltage (VDD) for the MT46V32M16P-6T.F is +2.5V ±0.2V, with VDDQ also at +2.5V ±0.2V. For DDR400, it can be +2.6V ±0.1V.
The MT46V32M16P-6T.F is available in a 66-pin TSOP package and a 60-ball FBGA package (10mm x 12.5mm).
The auto refresh rate for commercial and industrial applications is 64ms (8192 cycles).
The cycle time for DDR400B with CL=3 is 5ns.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.