BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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36,160 pcs
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36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
| SVHC Present |
This MT46V16M16TG-6TIT component from Micron Technology is a DDR DRAM memory IC. It features an organization of 16M X 16 and a memory width of 16 bits, providing a memory density of 2.68E8 degrees.
The device operates synchronously with an access mode of FOUR BANK PAGE BURST. It has a maximum access time (tRAC) of 0.7 ns. The operating voltage ranges from a minimum of 2.5V to a maximum of 2.7V, with a nominal voltage of 2.6V.
Packaged in a 66-terminal TSOP-66, this surface-mount component has a terminal pitch of 0.65 mm and gull wing leads with a tin-lead finish. The operating temperature range is from -40°C to 85°C. The technology used is CMOS.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory density is 268 Mbit (2.68E8 bits).
It is organized as 16M x 16 (16 megawords by 16 bits).
Operating voltage is 2.5 V minimum, 2.6 V nominal, 2.7 V maximum.
Operating temperature range is -40°C to 85°C.
It comes in a TSOP-66 package (Small Outline, Thin Profile, Shrink Pitch) with surface mount gull wing terminals.
Maximum access time is 0.7 ns.
CMOS technology is used.