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120 pcs
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120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MT46V16M16TG-6 from Micron Technology is a high-speed DDR DRAM memory integrated circuit. It features an organization of 16M words by 16 bits, providing a total memory density of 2.68E8 bits. This component operates in synchronous mode with a four-bank page burst access mode, enabling efficient data retrieval with a maximum access time of 0.7 ns.
The device requires a supply voltage ranging from 2.5V to 2.7V, with a nominal voltage of 2.6V. It is built using CMOS technology and is designed for commercial temperature grades, operating between 0°C and 70°C. The MT46V16M16TG-6 is surface-mounted and comes in a 66-terminal TSOP-66 package with gull wing leads and a terminal pitch of 0.65 mm. The package body is made of plastic/epoxy.
This DDR DRAM is suitable for applications requiring fast and reliable memory access. Its specifications make it a viable option for various electronic systems where memory performance is critical.
The memory size is 256 Mb (268,000,000 bits).
It is organized as 16M words by 16 bits (16M x 16).
The maximum access time (tRAC) is 0.7 ns.
The nominal supply voltage is 2.6 V, with a minimum of 2.5 V and a maximum of 2.7 V.
The operating temperature range is 0 °C to 70 °C.
It is available in a TSOP-66 surface mount package with gull wing terminals on a 0.65 mm pitch.
The mounting type is surface mount.