| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
102,000 pcs
|
102000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,463 pcs
|
15463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
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The Micron Technology MT46H64M16LFBF-5 IT:B is a 1Gb Mobile Low-Power DDR SDRAM. It operates with a VDD/VDDQ voltage range of 1.70V to 1.95V and supports a clock frequency of up to 200 MHz, providing an access time of 5.0 ns.
This SDRAM features an internal, pipelined double data rate (DDR) architecture, enabling two data accesses per clock cycle. It includes differential clock inputs (CK and CK#) and commands entered on each positive CK edge. The device supports 4 internal banks for concurrent operation and offers programmable burst lengths of 2, 4, 8, or 16.
Key features include bidirectional data strobe (DQS), data masks (DM) per byte for write data masking, and support for concurrent auto precharge. It also incorporates auto refresh and self refresh modes, with temperature-compensated and partial-array self refresh options. The component is compatible with 1.8V LVCMOS inputs and includes selectable output drive strength and clock stop capability.
The MT46H64M16LFBF-5 IT:B is housed in a 60-ball VFBGA (8mm x 9mm) package and is designed for surface mounting. It operates within an industrial temperature range of -40°C to 85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.70V to 1.95V.
60-VFBGA (8x9mm) surface mount package.
-40°C to 85°C.
200 MHz.
1 Gbit (64M x 16).
5.0 ns at CL=3.
Auto refresh and self refresh with temperature-compensated and partial-array options.