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140 pcs
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140 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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This Micron Technology MT45W4MW16BFB-706 WT is a 64Mbit Pseudo SRAM (PSRAM) memory integrated circuit. It supports asynchronous, page, and burst operations, offering flexibility for various applications.
The memory features a density of 64Mbit and an organization of 4M x 16, with a parallel interface. Key electrical specifications include a random access time of 70ns, a write cycle time of 70ns, and a maximum clock rate of 80 MHz. The device operates within a supply voltage range of 1.7V to 1.95V for VCC and 1.70V to 3.30V for VCCQ.
Designed for low power consumption, it offers features like temperature-compensated refresh (TCR) and deep power-down (DPD) mode. Power consumption during asynchronous read is less than 25mA, and standby current is 120µA (standard) or 100µA (low-power option).
The component is housed in a 54-ball VFBGA package and is suitable for surface mount applications. It operates within an industrial temperature range of -30°C to 85°C (TC).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 64 Mbit organized as 4M x 16.
The supply voltage (VCC) is 1.7V to 1.95V, and the VCCQ range is 1.70V to 3.30V.
The operating temperature range is -30°C to +85°C (TC).
It is available in a 54-VFBGA (6x9 mm) package for surface mount.
The random access time is 70 ns.
The maximum clock rate is 80 MHz.
Asynchronous read: <25mA; continuous burst read: <15mA; intrapage read: <15mA; initial access burst read: <35mA; standby: 120µA (standard) or 100µA (low-power); deep power-down: <10µA typical at 25°C.