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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Micron Technology MT45W2MW16PABA-70 WT is a 32Mbit Pseudo SRAM (PSRAM) memory integrated circuit designed for various applications. It offers both asynchronous and page mode interfaces, providing flexibility in data access.
Key electrical specifications include a memory size of 32Mbit, organized as 2M x 16, with a nominal access time of 70 ns for random access and interpage reads. Intrapage read access times are as fast as 20 ns. The device operates within a voltage range of 1.7V to 1.95V.
This PSRAM memory IC is housed in a 48-VFBGA package, suitable for surface mount applications. It operates within a temperature range of -30°C to 85°C (TC). Power consumption is notable, with asynchronous reads drawing less than 20mA and intrapage reads less than 15mA. Standby power for the 16Mb version is 80µA, and deep power-down mode consumes less than 10µA typically.
Features such as temperature-compensated refresh (TCR), an on-chip temperature sensor, partial array refresh (PAR), and deep power-down (DPD) mode contribute to its low-power characteristics. This makes it suitable for power-sensitive designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The VCC supply voltage range is 1.70V to 1.95V, and the VCCQ I/O supply range is 1.70V to 3.30V.
The device is offered in a 48-VFBGA (very thin fine-pitch ball grid array) package with a 6x8 mm body size.
The operating temperature range is -30°C to 85°C, suitable for wireless applications.
Random access time is 70ns, interpage read access is 70ns, and intrapage read access is 20ns.
The memory is organized as 2M words by 16 bits (2M x 16).
Read current is less than 20mA (asynchronous) and less than 15mA (intrapage). Standby current is 80µA, and deep power-down current is less than 10µA typical at 25°C.