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470 pcs
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470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This RLDRAM 3 memory component from Micron Technology, part number MT44K64M18RB-083F:A, offers a substantial 1.125 Gbit storage capacity.
It features a high clock frequency of 1.2 GHz, enabling a data rate of 2400 Mb/s/ball and a peak bandwidth of 86.4 Gb/s for x36 configurations. The memory organization is 64M x 18, with 16 banks for efficient operation. Key electrical specifications include a 1.2V center-terminated push/pull I/O, a VDD of 1.35V, and an optional VDDQ of 1.35V for 2400 operation. The minimum cycle time (tRC) is 6.67 ns.
The device supports SDR addressing and programmable READ/WRITE latency. It includes features like data mask for WRITE commands, differential input clocks, free-running differential data clocks, and an on-die DLL for clock-aligned data. A 64ms refresh cycle is implemented, with 128K refreshes per 64ms.
Packaged in a 168-TBGA (Surface Mount) configuration, this memory IC is designed for demanding applications requiring high speed and density. It operates within a temperature range of 0°C to 95°C (TC) and features integrated on-die termination (ODT) with matched impedance outputs of 40Ω or 60Ω.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1.125 Gbit.
The clock frequency is 1.2 GHz.
The access time is 6.67 ns.
The operating voltage range is 1.28V to 1.42V, with 1.2V I/O, 1.35V VDD, and optional 1.35V VDDQ for 2400 operation.
The operating temperature range is 0°C to 95°C (TC).
It is supplied in a 168-TBGA package, which is surface mountable.