| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
161 pcs
|
161 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Memory Format | |
| Memory Interface | |
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| SVHC Present | |
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| Technology | |
| Voltage |
The Micron Technology MT41J256M16HA-125:E is a high-performance 4 Gbit DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) designed for demanding applications. It operates with a supply voltage range of 1.425V to 1.575V, with a nominal voltage of 1.5V.
This component features a memory organization of 256M x 16 and a memory interface of Parallel. Key timing parameters include a tFAW target of 30ns and an access time of 13.75 ns. The device supports a clock frequency of 800 MHz and features a reduced tFAW specification.
Packaged in a 96-TFBGA (9x14mm) format, it is designed for surface mounting. The operating temperature range is 0°C to 95°C (TC). This DDR3 SDRAM is suitable for applications requiring high-speed data access and significant memory capacity.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.5V nominal, with a range of 1.425V to 1.575V.
800 MHz.
4 Gbit.
256M x 16.
0°C to 95°C (TC).
96-FBGA (9x14) or 96-TFBGA, surface mount.
CL=14, tRCD=13.09ns, tRP=13.09ns, with a cycle time of 0.938ns.