MT3S35T MT3S35T is a Toshiba RF bipolar junction transistor designed for high-frequency applications.
Mfr Part #:

MT3S35T

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
MT3S35T is a Toshiba RF bipolar junction transistor designed for high-frequency applications.
✓ Total Stock: 695,385 pcs
$ Price Range: $0.99

MT3S35T Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
695,385 pcs
695385 pcs On Request 1 On Request On Request On Request On Request On Request

MT3S35T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name

MT3S35T Description

Short technical summary and product information.

The MT3S35T is a bipolar junction transistor (BJT) from Toshiba, categorized for RF applications. This component is designed for surface mount assembly and is intended for use in RF amplifier and oscillator circuits. For detailed electrical characteristics, please consult the manufacturer's datasheet.

MT3S35T Quick Information

Product Type: Bipolar Junction Transistor (BJT) - RF
Series: MT3S35
Canonical Name: MT3S35T RF Bipolar Transistor by Toshiba
Subcategory: Bipolar Junction Transistor

MT3S35T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MT3S35T Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MT3S35T Features

  • RF bipolar transistor from Toshiba.
  • RoHS3 compliant and REACH unaffected.
  • MSL level 1 for unlimited floor life.
  • Categorized under discrete semiconductor products.

MT3S35T Applications

  • Used in RF amplifier stages.
  • Ideal for oscillator circuits.
  • Suitable for low-noise RF front-ends.
Home

Categories