| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Voltage |
This Micron Technology MT29F8G08ABACAH4-IT:C TR is a high-density 8Gbit parallel NAND Flash memory integrated circuit. Designed for robust data storage, it features a non-volatile memory type and operates efficiently within a voltage range of 2.7V to 3.6V.
The device is specified for an operating temperature range of -40°C to 85°C (TA), making it suitable for various environmental conditions. Its memory organization is 1G x 8, and it comes in a compact 63-VFBGA package, designed for surface mount applications.
Key specifications include its parallel interface and NAND Flash technology, providing a reliable solution for applications requiring significant data storage capacity. The component is RoHS3 compliant, indicating adherence to environmental standards for electronic products.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 8 Gbit.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
It comes in a 63-VFBGA (9x11) package.
The memory organization is 1G x 8.