| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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382 pcs
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382 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The MT29F512G08EEHAFJ4-3R:A from Micron Technology is a high-capacity 512Gbit NAND Flash Memory designed for various storage applications. This component utilizes TLC (Triple-Level Cell) technology within its 3D NAND architecture, offering a balance of density and performance.
Key electrical specifications include a parallel interface, a clock frequency of 333 MHz, and an operating voltage range of 2.5V to 3.6V. The memory is organized as 64G x 8, providing efficient data storage and retrieval. It operates within a temperature range of 0°C to 70°C (TA).
Packaged in a 132-VBGA (12x18) format, this memory component is designed for surface mounting. Its non-volatile memory type ensures data retention without continuous power. The part is identified by DK Part Number MT29F512G08EEHAFJ4-3R:A-ND.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512 Gbit.
It is a Non-Volatile FLASH memory.
The memory interface is Parallel.
The memory is organized as 64G x 8.
The operating voltage range is 2.5V to 3.6V.
The operating temperature range is 0°C to 70°C.
The device is available in a 132-VBGA (12x18mm) package.