| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,173 pcs
|
1173 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
188 pcs
|
188 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | 1502+ | On Request | On Request |
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The MT29F4G08ABAEAWP-IT:E from Micron Technology is a high-density 4Gbit NAND Flash memory component designed for various storage applications. It features a parallel interface for data transfer and operates with a supply voltage ranging from 2.7V to 3.6V.
This memory device is organized as 512M x 8 and utilizes NAND Flash technology. It is specified for operation across a wide temperature range, from -40°C to 85°C (TA), making it suitable for demanding environments. The component is available in a 48-TSOP I package, designed for surface mounting.
Key specifications include its 4Gbit memory size and non-volatile memory type. The MT29F4G08ABAEAWP-IT:E is built with Micron's advanced NAND Flash technology, offering reliable data storage solutions. Its robust operating parameters and package type facilitate integration into diverse electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 4 Gbit.
It is a Non-Volatile memory.
The memory interface is Parallel.
The operating voltage is 2.7V to 3.6V.
The operating temperature is -40°C to 85°C (TA).
It is supplied in a 48-TSOP I package.
The RoHS status is RoHS3 Compliant.
