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MT29F4G08ABAEAWP:E The Micron Technology MT29F4G08ABAEAWP:E is a 4Gbit parallel NAND Flash memory IC. It operates at voltages between 2.7V and 3.6V and features a 48-TSOP I package.
Mfr Part #:

MT29F4G08ABAEAWP:E

Available from 5 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology MT29F4G08ABAEAWP:E is a 4Gbit parallel NAND Flash memory IC. It operates at voltages between 2.7V and 3.6V and features a 48-TSOP I package.
✓ Total Stock: 20,230 pcs
$ Price Range: $1.28

MT29F4G08ABAEAWP:E Available from 5 distributors

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✓ Non-Authorised
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MT29F4G08ABAEAWP:E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Technology
Voltage
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MT29F4G08ABAEAWP:E Description

Short technical summary and product information.

This Micron Technology MT29F4G08ABAEAWP:E is a high-density 4Gbit NAND Flash memory component designed for non-volatile data storage. It utilizes a parallel interface for data transfer and operates within a voltage range of 2.7V to 3.6V.

 

The memory is organized as 512M x 8 bits, providing ample storage capacity for various applications. The component is housed in a 48-TSOP I package, suitable for surface mounting.

 

Key specifications include an operating temperature range of 0°C to 70°C (TA). The device is classified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions.

 

This part is ideal for embedded systems, consumer electronics, and industrial applications requiring reliable and high-capacity flash memory solutions.

MT29F4G08ABAEAWP:E Quick Information

Product Type: NAND Flash Memory
Canonical Name: Micron Technology MT29F4G08ABAEAWP:E Parallel NAND Flash Memory
Subcategory: NAND Flash

MT29F4G08ABAEAWP:E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MT29F4G08ABAEAWP:E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

MT29F4G08ABAEAWP:E Features

  • 4Gbit parallel NAND Flash memory.
  • Operates from 2.7V to 3.6V.
  • 48-TSOP I surface mount package.
  • 0°C to 70°C operating temperature.
  • RoHS3 Compliant.

MT29F4G08ABAEAWP:E Applications

  • Ideal for embedded systems.
  • Suitable for consumer electronics.
  • Used in industrial applications.
  • Provides non-volatile data storage.

MT29F4G08ABAEAWP:E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the MT29F4G08ABAEAWP:E?

The memory size is 4Gbit.

What is the memory organization of this device?

The memory is organized as 512M x 8.

What is the operating voltage range?

The operating voltage range is 2.7V to 3.6V.

What is the operating temperature range?

The operating temperature range is 0°C to 70°C.

What package type does the MT29F4G08ABAEAWP:E use?

It uses a 48-TSOP I (48-TFSOP, 0.724" width) surface mount package.

What type of memory interface does it have?

It has a parallel memory interface.

Is this memory volatile or non-volatile?

This is a non-volatile memory device.

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