| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,130 pcs
|
1130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology component, part number MT29F4G08ABAEAH4:E TR, is a 4 Gbit parallel FLASH memory. It utilizes NAND Flash technology and has a memory organization of 512M x 8.
The device operates within a voltage range of 2.7V to 3.6V and has an operating temperature range of 0°C to 70°C (TA). It is packaged in a 63-VFBGA (9x11) format and is designed for surface mounting.
This non-volatile memory is suitable for applications requiring high-density data storage. Its parallel interface ensures efficient data transfer for various embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V
63-VFBGA (9x11)
0°C to 70°C (TA)
4Gbit, organized as 512M x 8
Parallel
NAND Flash
Surface Mount