| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
This Micron Technology MT29F4G08ABADAH4-E:D is a high-density memory integrated circuit. It features 4Gbit of FLASH NAND memory, organized as 512M x 8 bits, and utilizes a parallel interface for data transfer.
The device operates within a voltage range of 2.7V to 3.6V and is designed for a temperature range of 0°C to 70°C. It is supplied in a compact 63-VFBGA package, suitable for surface mount applications.
This component is classified as Non-Volatile memory, specifically FLASH - NAND technology. Its RoHS status is compliant, and it has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
63-VFBGA (9x11mm).
0°C to 70°C.
4Gbit (512M x 8).
Parallel.
512M x 8.
Surface mount.