| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,930 pcs
|
7930 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
375 pcs
|
375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
120 pcs
|
120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron MT29F4G08ABADAH4:D is a high-density NAND Flash memory integrated circuit designed for various storage applications. This component offers a substantial 4Gbit storage capacity, utilizing a parallel interface for data transfer.
Key electrical specifications include an operating voltage range of 2.7V to 3.6V and a technology type of FLASH - NAND. The memory is organized as 512M x 8, providing efficient data management. It operates reliably within a temperature range of 0°C to 70°C (TA).
Packaged in a compact 63-VFBGA (9x11) format, the MT29F4G08ABADAH4:D is designed for surface mount applications. Its non-volatile memory type ensures data retention without continuous power. This component is suitable for applications requiring robust and high-capacity flash storage solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 4 Gbit.
It is a Non-Volatile memory.
The memory interface is Parallel.
The operating voltage is between 2.7V and 3.6V.
The operating temperature range is 0°C to 70°C (TA).
It is supplied in a 63-VFBGA (9x11) package.
It is a Surface Mount device.