| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,767 pcs
|
3767 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F4G08ABADAH4-AITX:D is a high-density 4Gbit NAND Flash Memory designed for various storage applications. It features a parallel interface for data transfer and operates reliably within a wide temperature range of -40°C to 85°C.
The memory is organized as 512M x 8 and utilizes FLASH - NAND technology. It requires a supply voltage between 2.7V and 3.6V, making it suitable for a broad spectrum of electronic systems. The component is supplied in a compact 63-VFBGA package, designed for surface mounting.
This device is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for standard industrial handling processes. Its REACH status is unaffected. The MT29F4G08ABADAH4-AITX:D is a robust memory solution for applications demanding reliable and high-capacity data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4 Gbit.
512M x 8.
Parallel.
Non-volatile.
2.7V to 3.6V.
-40°C to 85°C.
63-VFBGA (9x11).