| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,960 pcs
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1960 pcs | On Request | 1 | On Request | On Request | 12+15+16+ | On Request | On Request |
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This Micron Technology MT29F32G08AFABAWP:B is a high-density 32Gbit NAND Flash memory integrated circuit. It features a parallel interface for efficient data transfer and operates within a voltage range of 2.7V to 3.6V.
The memory is organized as 4G x 8 bits and is housed in a 48-TSOP I package, designed for surface mounting. The operating temperature range is 0°C to 70°C (TA).
This non-volatile memory is suitable for various applications requiring substantial data storage, including consumer electronics, embedded systems, and industrial equipment. Its parallel interface offers higher data throughput compared to serial memories.
Selection considerations include checking system voltage requirements and confirming compatibility with parallel NAND flash protocols. The part is noted as obsolete, making it suitable for service, repair, or legacy designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MT29F32G08AFABAWP:B operates with a supply voltage range of 2.7V to 3.6V.
The MT29F32G08AFABAWP:B has an operating temperature range of 0°C to 70°C (TA).
The MT29F32G08AFABAWP:B has a memory size of 32Gbit.
The MT29F32G08AFABAWP:B uses a Parallel memory interface.
The MT29F32G08AFABAWP:B uses FLASH - NAND technology.
The MT29F32G08AFABAWP:B is supplied in a 48-TSOP I package.
The ECCN code for the MT29F32G08AFABAWP:B is 3A991B1A.