| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,040 pcs
|
9040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F32G08ABAAAWP:A is a high-density 32Gbit Parallel FLASH NAND Memory integrated circuit. Designed for robust data storage, it operates within a supply voltage range of 2.7V to 3.6V, making it suitable for various electronic systems.
The component features a 48-TSOP I package, indicating a surface mount form factor. Its operating temperature range is specified from 0°C to 70°C (TA), ensuring reliable performance in typical ambient conditions. The technology employed is FLASH - NAND, a common choice for non-volatile storage applications requiring high capacity and reasonable read/write speeds.
With a memory organization of 4G x 8 and a parallel interface, this memory IC is designed for applications demanding significant data storage capabilities. Its non-volatile nature ensures data retention even when power is removed, a critical feature for embedded systems, data logging, and storage solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
32 Gbit (4G x 8).
48-TSOP I (surface mount).
0°C to 70°C (TA).
Parallel.
4G x 8.