Mfr Part #:

MT29F2T08CUHBBM4-3R:B

The Micron Technology MT29F2T08CUHBBM4-3R:B is a 2 Tbit parallel FLASH memory IC. It operates with a clock frequency of 333 MHz and a voltage range of 2.5V to 3.6V.

✓ Total Stock: 8,133 pcs

$ Price Range: $1.28

MT29F2T08CUHBBM4-3R:B Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,362 pcs On Request	7362 pcs	On Request	1	On Request	On Request	19＋	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	620 pcs On Request	620 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Romaks Technologies ✓ Non-Authorised Inventory information	151 pcs On Request	151 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

MT29F2T08CUHBBM4-3R:B Description

Short technical summary and product information.

This Micron Technology MT29F2T08CUHBBM4-3R:B is a high-capacity 2 Tbit parallel FLASH memory integrated circuit. It utilizes NAND FLASH technology for non-volatile storage.

The component features a clock frequency of 333 MHz, enabling fast data access. It operates within a voltage range of 2.5V to 3.6V, making it suitable for various system designs. The memory organization is 256G x 8, providing efficient data handling.

Designed for a wide range of applications, this FLASH memory IC operates reliably within a temperature range of 0°C to 70°C (TA). Its parallel interface simplifies integration into existing electronic systems. The RoHS3 compliant status indicates adherence to environmental regulations.

MT29F2T08CUHBBM4-3R:B Quick Information

Product Type: FLASH Memory IC

Canonical Name: Micron Technology MT29F2T08CUHBBM4-3R:B Parallel FLASH Memory IC

Subcategory: FLASH Memory

MT29F2T08CUHBBM4-3R:B Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

MT29F2T08CUHBBM4-3R:B Estimated Pricing

Qty	Low	High
1+	$1.28	$1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

MT29F2T08CUHBBM4-3R:B Features

2 Tbit parallel FLASH NAND memory.
333 MHz clock frequency for fast access.
Operates from 2.5V to 3.6V supply.
Wide operating temperature range.
RoHS3 compliant for environmental standards.

MT29F2T08CUHBBM4-3R:B Applications

High-density data storage solutions.
Embedded systems requiring non-volatile memory.
Applications needing fast parallel interface access.
Consumer electronics devices.
Industrial control systems.

MT29F2T08CUHBBM4-3R:B FAQs

7 frequently asked questions generated from this part’s specifications.

What is the memory size of the MT29F2T08CUHBBM4-3R:B?

The memory size is 2 Tbit.

What type of memory is the MT29F2T08CUHBBM4-3R:B?

It is Non-Volatile FLASH - NAND memory.

What is the clock frequency of this FLASH memory IC?

The clock frequency is 333 MHz.

What is the operating voltage range for the MT29F2T08CUHBBM4-3R:B?

The operating voltage range is 2.5V to 3.6V.

What is the operating temperature range?

The operating temperature range is 0°C to 70°C (TA).

Is the MT29F2T08CUHBBM4-3R:B RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1 Unlimited.

Category	Memory
Manufacturer Name	Micron Technology
Clock Frequency	333 MHz
Memory Format	FLASH
Memory Interface	Parallel
Memory Organization	256G x 8
Memory Size	2 Tbit
Memory Type	Non-Volatile
Operating Temperature	0°C ~ 70°C
Technology	FLASH - NAND
Voltage	2.5 V ~ 3.6 V