| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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438 pcs
|
438 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F2T08CTCCBJ7-6R:C is a high-capacity 2 Terabit (2TB) non-volatile memory device utilizing FLASH - NAND technology. It features a parallel interface and a memory organization of 256G x 8.
The component operates within a voltage range of 2.7V to 3.6V and has a clock frequency of 167 MHz. The operating temperature range is specified as 0°C to 70°C (TA).
Packaged in a 152-LBGA (14x18) format, this memory is designed for surface mount applications. Its RoHS3 compliance and Moisture Sensitivity Level (MSL) of 1 indicate suitability for various manufacturing processes.
This memory is suitable for applications requiring large data storage and fast read/write operations within the specified environmental and electrical parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
152-LBGA (14x18mm).
0°C to 70°C (ambient).
2 Tbit.
Parallel.
167 MHz.
256G x 8.