| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Voltage |
This Micron Technology MT29F2G16ABBEAH4-AAT:E is a 2Gb parallel NAND flash memory integrated circuit. It features a memory organization of 128M x 16 and operates within a voltage range of 1.7V to 1.95V.
The device is designed for a wide operating temperature range, from -40°C to 105°C (TA), making it suitable for various environmental conditions. The memory technology is FLASH - NAND, providing non-volatile storage capabilities.
Packaged in a 63-VFBGA (9x11) format, this component is designed for surface mounting. Its parallel interface facilitates data transfer for applications requiring efficient storage solutions.
This part is certified with AEC-Q100, indicating its suitability for automotive applications. It is designed for robust data storage in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2Gb.
128M x 16.
1.7V to 1.95V.
-40°C to 105°C.
63-VFBGA (9x11).
Surface Mount.
NAND Flash.