| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,505 pcs
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2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F2G16ABAEAWP:E is a high-density 2 Gbit NAND Flash memory component designed for various storage applications. It features a parallel interface for data access and operates reliably within a voltage range of 2.7V to 3.6V.
The device is specified for operation in temperatures from 0°C to 70°C (TA), making it suitable for a range of environmental conditions. The memory is organized as 128M x 16 bits and utilizes NAND Flash technology for non-volatile data storage.
Packaged in a 48-TSOP I (Thin Small Outline Package), this component is designed for surface mounting. The package is a 48-TFSOP with a width of 0.724 inches (18.40mm). Its RoHS3 compliant status indicates adherence to environmental regulations regarding hazardous substances.
This memory IC is a robust solution for applications requiring significant data storage capacity and reliable performance. Its specifications make it a suitable choice for embedded systems, consumer electronics, and industrial applications where non-volatile memory is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2 Gbit.
Parallel.
2.7V to 3.6V.
0°C to 70°C.
48-TSOP I (48-TFSOP, 0.724" width, 18.40mm).
128M x 16.
NAND flash.