MT29F2G08ABBEAH4:E The Micron Technology MT29F2G08ABBEAH4:E is a 2Gbit parallel NAND Flash memory IC. It operates with a supply voltage between 1.7V and 1.95V.
Mfr Part #:

MT29F2G08ABBEAH4:E

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology MT29F2G08ABBEAH4:E is a 2Gbit parallel NAND Flash memory IC. It operates with a supply voltage between 1.7V and 1.95V.
✓ Total Stock: 21,200 pcs
$ Price Range: $1.28

MT29F2G08ABBEAH4:E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
20,000 pcs
20000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request

MT29F2G08ABBEAH4:E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage

MT29F2G08ABBEAH4:E Description

Short technical summary and product information.

The Micron Technology MT29F2G08ABBEAH4:E is a high-density non-volatile memory integrated circuit. It features a 2Gbit memory size organized as 256M x 8 bits, utilizing a parallel interface for data transfer.

 

This NAND Flash memory operates within a supply voltage range of 1.7V to 1.95V and is designed for a temperature range of 0°C to 70°C (TA). The component is housed in a 63-VFBGA package, suitable for surface mount applications.

 

Key specifications include its FLASH - NAND technology and FLASH memory format, making it suitable for various data storage applications requiring reliable non-volatile memory solutions. The product status is listed as Obsolete.

MT29F2G08ABBEAH4:E Quick Information

Product Type: NAND Flash Memory
Canonical Name: Micron Technology MT29F2G08ABBEAH4:E Parallel NAND Flash Memory
Subcategory: NAND Flash

MT29F2G08ABBEAH4:E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MT29F2G08ABBEAH4:E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

MT29F2G08ABBEAH4:E Features

  • 2Gbit NAND Flash memory capacity.
  • Parallel memory interface for fast access.
  • Operating voltage 1.7V to 1.95V.
  • Surface mount 63-VFBGA package.
  • Commercial temperature range 0°C to 70°C.

MT29F2G08ABBEAH4:E Applications

  • Suitable for data storage applications.
  • Ideal for embedded systems.
  • Used in consumer electronics.
  • Applications requiring non-volatile memory.

MT29F2G08ABBEAH4:E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the MT29F2G08ABBEAH4:E?

1.7V to 1.95V.

What is the package type of the MT29F2G08ABBEAH4:E?

63-VFBGA (9x11) surface mount package.

What is the operating temperature range?

0°C to 70°C.

What is the memory size of this device?

2Gbit.

What memory interface does it use?

Parallel.

What is the memory organization?

256M x 8.

What memory technology is used?

FLASH - NAND.

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