| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The Micron Technology MT29F2G08ABBEAH4:E is a high-density non-volatile memory integrated circuit. It features a 2Gbit memory size organized as 256M x 8 bits, utilizing a parallel interface for data transfer.
This NAND Flash memory operates within a supply voltage range of 1.7V to 1.95V and is designed for a temperature range of 0°C to 70°C (TA). The component is housed in a 63-VFBGA package, suitable for surface mount applications.
Key specifications include its FLASH - NAND technology and FLASH memory format, making it suitable for various data storage applications requiring reliable non-volatile memory solutions. The product status is listed as Obsolete.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.7V to 1.95V.
63-VFBGA (9x11) surface mount package.
0°C to 70°C.
2Gbit.
Parallel.
256M x 8.
FLASH - NAND.