| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F2G08ABAGAH4-ITE:G is a high-density 2Gbit NAND Flash memory component designed for various storage applications. It features a parallel interface for data transfer and operates reliably within a voltage range of 2.7V to 3.6V.
The device is specified for operation across a wide temperature range, from -40°C to 85°C (TA), making it suitable for demanding environments. The memory is organized as 256M x 8 and utilizes Non-Volatile technology.
Packaged in a 63-VFBGA (9x11) format, this component is designed for surface mount applications. It adheres to RoHS3 compliance standards, indicating its suitability for use in modern electronic designs where environmental regulations are a consideration.
Key specifications include its 2Gbit memory size, parallel interface, and NAND Flash technology. This makes it a robust choice for applications requiring reliable and high-capacity data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -40°C to 85°C (TA).
The voltage requirement is between 2.7V and 3.6V.
The memory size is 2Gbit.
This component uses a Parallel memory interface.
The package type is 63-VFBGA.
Yes, the RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.