| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F2G08ABAEAWP:E TR is a high-density NAND Flash memory integrated circuit with a capacity of 2 Gbit. It features a parallel interface and an organization of 256M x 8, making it suitable for various data storage applications.
The device operates within a supply voltage range of 2.7V to 3.6V, with a typical operating voltage of 3.3V. It is designed for commercial applications, with an operating temperature range from 0 C to 70 C. The memory is classified as Non-Volatile and uses FLASH - NAND technology.
Packaged in a 48-TSOP I (0.724", 18.40mm Width) format, this component is designed for surface mount applications. It is supplied on tape and reel with a standard package quantity of 1000 units. The memory has a 29-bit address bus and an 8-bit data bus width.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 2 Gbit.
The memory is organized as 256M x 8 bits.
The operating voltage range is 2.7V to 3.6V, with a typical voltage of 3.3V.
The operating temperature range is 0°C to 70°C.
It is available in a 48-pin TSOP package.
The maximum supply current is 35 mA.
The data bus width is 8 bits.