| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MT29F1G08ABBFAH4-ITE:F TR is a high-density 1Gbit NAND Flash Memory integrated circuit manufactured by Micron Technology. This component features a parallel interface with an 8-bit data bus width, designed for efficient data transfer.
Operating within a supply voltage range of 1.7V to 1.95V, the MT29F1G08ABBFAH4-ITE:F TR offers a maximum supply current of 35mA and a maximum read current of 35mA. It is specified for operation across a wide temperature range, from -40°C to 85°C.
The memory is organized as 128M x 8 and utilizes FLASH - NAND technology. It comes in a compact 63-VFBGA package suitable for surface mount (SMD/SMT) applications. The product status is active and it is RoHS3 compliant.
This memory IC is ideal for various embedded systems and storage applications requiring reliable non-volatile memory. Its robust specifications and packaging make it suitable for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 1.7V to 1.95V.
It is available in a 63-VFBGA (9x11) package for surface mounting.
The operating temperature range is -40°C to +85°C.
The memory size is 1Gbit, organized as 128M x 8.
It uses a parallel interface with an 8-bit data bus.
The maximum supply current is 35 mA.