| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,574 pcs
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1574 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F1G08ABAFAH4-ITE:F is a high-density 1Gbit parallel NAND flash memory integrated circuit. Designed for reliable data storage, it operates across a voltage range of 2.7V to 3.6V, making it suitable for various embedded systems.
The memory is organized as 128M x 8 and features a parallel interface for efficient data transfer. It is housed in a compact 63-VFBGA (9x11) package, designed for surface mounting.
With an operating temperature range of -40°C to 85°C (TA), this flash memory is built to withstand demanding environmental conditions. It is classified as RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range for the MT29F1G08ABAFAH4-ITE:F is 2.7V to 3.6V.
The package type for the MT29F1G08ABAFAH4-ITE:F is 63-VFBGA.
The operating temperature range for the MT29F1G08ABAFAH4-ITE:F is -40°C to 85°C (TA).
The memory size of the MT29F1G08ABAFAH4-ITE:F is 1Gbit.
The MT29F1G08ABAFAH4-ITE:F is a Non-Volatile FLASH - NAND Memory.
The memory interface of the MT29F1G08ABAFAH4-ITE:F is Parallel.
The memory organization of the MT29F1G08ABAFAH4-ITE:F is 128M x 8.
