| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Conflict Minerals | |
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The Micron Technology MT29F1G08ABAEAWP-IT:E TR is a 1Gbit parallel NAND Flash memory integrated circuit. It features a non-volatile memory type and an organization of 128M x 8. The device operates within a voltage range of 2.7V to 3.6V and has an operating temperature range of -40°C to 85°C (TA).
Packaged in a 48-TSOP I, this component is designed for surface mount applications. The memory technology is FLASH - NAND, offering a capacity of 1Gbit. The interface is parallel, making it suitable for various embedded systems requiring non-volatile data storage.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. It is designed for applications requiring reliable and high-density data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1Gbit.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
It is available in a 48-TSOP I package (48-TFSOP, 0.724" width, 18.40mm width).
The memory interface is parallel.
The memory organization is 128M x 8.