| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15,067 pcs
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15067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,638 pcs
|
1638 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F1G08ABAEAH4-ITX:E is a non-volatile parallel Flash memory component with a density of 1 Gbit. It utilizes NAND Flash technology and is organized as 128M x 8.
The device operates with a supply voltage between 2.7V and 3.6V, making it suitable for a variety of applications. The operating temperature range is specified from -40°C to 85°C (TA), ensuring reliable performance in diverse environmental conditions.
Packaged in a 63-VFBGA (9x11) format, this component is designed for surface mounting. Its robust specifications make it a viable option for embedded systems and data storage applications requiring high-density non-volatile memory.
Compliance information indicates RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status. However, these compliance details are based on existing database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
It is a Non-Volatile memory of the FLASH - NAND technology type.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
The component is supplied in a 63-VFBGA (9x11) package.
It is designed for surface mounting.