| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,829 pcs
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25829 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Micron Technology MT29F1G08ABAEAH4-IT:E is a high-density 1Gbit parallel NAND Flash memory integrated circuit. Designed for robust data storage, it operates reliably within a voltage range of 2.7V to 3.6V.
The memory features a parallel interface and a NAND Flash technology, organized as 128M x 8 bits. It is specified for operation across a temperature range of -40°C to 85°C (TA).
The component is supplied in a compact 63-VFBGA package, suitable for surface mounting. Its RoHS3 compliance indicates adherence to environmental standards, and it is rated MSL 1 for moisture sensitivity.
This part is ideal for applications requiring non-volatile storage with a focus on performance and density.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
It uses FLASH - NAND technology.
The operating voltage range is 2.7V to 3.6V.
It operates from -40°C to 85°C (TA).
It is supplied in a 63-VFBGA package.
It is RoHS3 Compliant.
The MSL is 1 Unlimited.