| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
79 pcs
|
79 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Clock Frequency | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
This Micron Technology MT29E768G08EEHBBJ4-3:B is a high-capacity 768Gbit NAND Flash Memory IC designed for various storage applications. It features a parallel interface and operates at a clock frequency of 333 MHz, providing efficient data transfer.
The device supports an operating voltage range of 2.5V to 3.6V and operates within a temperature range of 0°C to 70°C (TA). It is housed in a 132-VBGA package, suitable for surface mount applications.
This component is classified as Non-Volatile Memory, specifically NAND Flash technology. Its organization is 96G x 8, making it suitable for dense storage solutions. The RoHS3 compliance indicates adherence to environmental standards.
Ideal for embedded systems, data storage devices, and other applications requiring reliable and high-density flash memory. The surface mountable 132-VBGA package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 768 Gbit.
It is Non-Volatile memory.
The memory format is FLASH.
The memory interface is Parallel.
The operating voltage is 2.5V to 3.6V.
The operating temperature is 0°C to 70°C (TA).
It is in a 132-VBGA package.