| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | 1334+ | On Request | On Request |
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The Micron Technology Inc. MT29C4G96MAAHBACKD-5 WT is a high-density memory solution integrating both NAND FLASH and Mobile LPDRAM technologies within a single package. This device offers a total memory size of 4 Gbit for FLASH and 4 Gbit for LPDRAM, organized as 256M x 16 (NAND) and 128M x 32 (LPDRAM) respectively.
Designed for high-speed data transfer, it supports a parallel interface and operates at a maximum clock frequency of 200 MHz. The supply voltage ranges from 1.7V to 1.95V, enabling low-power operation suitable for mobile and embedded applications. Its operating temperature range is -25°C to 85°C (TA).
The component is housed in a 137-VFBGA (13 x 10.5 mm) surface-mount package, designed for compact layouts and reliability. This combination of features makes it ideal for applications requiring both non-volatile and volatile memory in a single, space-efficient chip, such as mobile devices, portable electronics, and industrial control units.
1.7V to 1.95V.
137-VFBGA (13x10.5mm).
-25°C to 85°C.
Non-Volatile (NAND Flash) and Volatile (Mobile LPDRAM).
4Gbit NAND Flash and 4Gbit Mobile LPDRAM.
200 MHz.
Parallel.