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94 pcs
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94 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MT28FW01GABA1HJS-0AAT from Micron Technology is a high-density 1Gbit parallel NOR flash memory integrated circuit. Designed for reliable data storage, this component features a wide operating voltage range from 1.7V to 3.6V, making it suitable for various power-sensitive applications.
With an operating temperature range of -40°C to 105°C (TA), the MT28FW01GABA1HJS-0AAT is built to perform in demanding environments. Its memory interface is parallel, and it utilizes NOR flash technology for efficient read and write operations, offering an access time of 105 ns and a write cycle time of 60 ns. The memory organization is 64M x 16, providing ample capacity for firmware, configuration data, and other critical information.
This flash memory comes in a 56-TSOP package, specifically a 56-TFSOP with a width of 18.40mm, designed for surface mounting. Its non-volatile memory type ensures data retention even without power, making it a robust solution for embedded systems, industrial controls, and consumer electronics where persistent storage is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Gbit.
It is a Non-Volatile, FLASH - NOR memory.
The operating voltage range is 1.7V to 3.6V.
The operating temperature range is -40°C to 105°C (TA).
It is supplied in a 56-TSOP package, specifically a 56-TFSOP (0.724", 18.40mm Width).
It is a surface mount device.