| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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484 pcs
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484 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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This Micron Technology MT28F128J3RP-12 ET is a high-density Flash memory component designed for various embedded applications. It offers a memory size of 128Mbit and utilizes a parallel interface for data transfer.
The device operates within a voltage range of 2.7V to 3.6V, making it suitable for a wide array of system designs. With a read access time of 120 ns for 128Mb devices, it ensures efficient data retrieval. The memory organization is available in 16M x 8 or 8M x 16 configurations, providing flexibility for different system requirements.
Designed for reliability, the MT28F128J3RP-12 ET operates across an extended temperature range of -40°C to 85°C. It is housed in a 56-TSOP package, suitable for surface mounting. The memory technology is FLASH - Non-Volatile, supporting automatic write and erase algorithms with a high endurance of 100,000 erase cycles per block.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
128 Mbit.
120 ns maximum.
2.7V to 3.6V.
-40°C to +85°C.
56-TSOP (56-TFSOP, 0.724" body width).
100,000 erase cycles per block.
5.6 µs per byte using the write buffer.