| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,773 pcs
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9773 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Parallel NOR Flash memory from Micron Technology offers a density of 512Mbit. It utilizes Single-Level Cell (SLC) process technology and supports a supply voltage range of 2.7V to 3.6V for program, erase, and read operations. The device features asynchronous random and page read capabilities with a page access time of 20ns and a random access time of 105ns.
Key electrical characteristics include a buffer program speed of up to 2.5 MB/s and a word/byte program time of 25µs. Block erase operations for a 128KB block take approximately 0.2s. The memory organization is configurable as 64M x 8 or 32M x 16.
Designed for automotive applications, this memory operates within an ambient temperature range of -40°C to +105°C. It is available in a 56-pin TSOP package measuring 14 x 20mm. The device is RoHS-compliant and halogen-free, with a data retention of 20 years and a minimum of 100,000 erase cycles per block.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512Mbit.
It is a Non-Volatile FLASH - NOR memory.
The operating voltage is 2.7V to 3.6V.
The random access time is 105 ns.
The operating temperature range is -40°C to 105°C.
It is supplied in a 56-TSOP package.
The data retention is 20 years.