| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,954 pcs
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6954 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron MT28EW512ABA1HJS-0AAT is a high-performance 512Mb Parallel NOR Flash memory utilizing Single-Level Cell (SLC) process technology. Designed for demanding automotive environments, it operates across a wide supply voltage range of 2.7V to 3.6V.
This memory device offers a fast asynchronous random access time of 105ns and a page access time of 20ns. It supports a buffer program speed of up to 2.0 MB/s and an accelerated buffer program speed of 2.5 MB/s. The memory organization is flexible, supporting x8/x16 data buses with configurations of 64M x 8 or 32M x 16.
Key features include program/erase suspend and resume capabilities, unlock bypass, block erase, chip erase, and write-to-buffer functions. It also includes BLANK CHECK and CYCLIC REDUNDANCY CHECK (CRC) operations for data integrity. The device is available in a 56-pin TSOP package measuring 14 x 20mm, suitable for surface mounting.
With a minimum of 100,000 erase cycles per block and a data retention of 20 years, the MT28EW512ABA1HJS-0AAT is built for reliability and longevity in automotive applications. It operates within an ambient temperature range of -40°C to +105°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 512Mbit.
It is a Non-Volatile FLASH - NOR memory.
The operating voltage is between 2.7V and 3.6V.
The random access time is 105ns, and the page access time is 20ns.
The operating temperature range is -40°C to +105°C.
It is available in a 56-TSOP package.
The data retention is 20 years.