| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,850 pcs
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1850 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Micron Technology MT28EW01GABA1LPC-0SIT TR is a 1Gb embedded parallel NOR flash memory device. It utilizes Single-Level Cell (SLC) process technology and operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations. The memory offers asynchronous random and page read capabilities with a page access time of 20ns and a random access time of 95ns.
Key features include a buffer program speed of up to 2.5 MB/s and a block erase time of 0.2s. The memory organization is uniform blocks of 128KB or 64KW, with an x8/x16 data bus. It supports program/erase suspend and resume, unlock bypass, block erase, chip erase, and write-to-buffer capabilities. The device is designed for reliability with 100,000 minimum erase cycles per block and 20 years of data retention.
This component is available in a 64-ball LBGA package measuring 11 x 13mm, suitable for surface mounting. It operates within an ambient temperature range of -40°C to +85°C. The MT28EW01GABA1LPC-0SIT TR is RoHS-compliant and halogen-free.
Applications for this flash memory include embedded systems requiring reliable non-volatile storage, such as industrial control, automotive electronics, and consumer devices where high endurance and data integrity are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MT28EW01GABA1LPC-0SIT TR operates with a supply voltage range of 2.7V to 3.6V. The I/O buffer supply voltage is 1.65V to VCC.
The MT28EW01GABA1LPC-0SIT TR is available in a 64-ball LBGA (11x13mm) package. It is designed for surface mount applications.
The MT28EW01GABA1LPC-0SIT TR can operate within a temperature range of -40°C to +85°C.
The memory density of the MT28EW01GABA1LPC-0SIT TR is 1Gbit.
The typical random access time for the MT28EW01GABA1LPC-0SIT TR is 95ns when VCC = VCCQ = 2.7-3.6V, and 100ns when VCCQ = 1.65-VCC.
The typical buffer program speed is 2.0 MB/s when using full buffer program, and 2.5 MB/s when using accelerated buffer program (VHH).
Each block can endure a minimum of 100,000 erase cycles.