| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology MT28EW01GABA1LPC-0AAT is a high-performance Parallel NOR Flash memory device with a density of 1 Gbit. It utilizes Single-Level Cell (SLC) process technology and operates with a supply voltage range of 2.7V to 3.6V for programming, erasing, and reading.
This memory offers a fast asynchronous random access time of 105 ns and a page access time of 20 ns. It supports a parallel interface and is organized as 128M x 8 or 64M x 16. Key features include a buffer program speed of up to 2.5 MB/s (TYP) and a block erase time of 0.2s (TYP).
The device is designed for automotive applications, operating within an ambient temperature range of -40°C to +105°C. It boasts a minimum of 100,000 erase cycles per block and a data retention of 20 years (TYP). The package type is 64-LBGA (11x13mm) and it is suitable for surface mounting.
Compliance includes RoHS3 compliance and halogen-free packaging. The MT28EW01GABA1LPC-0AAT is designed for reliability and performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory density is 1 Gbit.
The operating voltage range is 2.7V to 3.6V.
The random access time is 105 ns, and the page access time is 20 ns.
The operating temperature range is -40°C to +105°C (TA).
It is supplied in a 64-LBGA package (11x13mm) and is suitable for surface mounting.
The data retention is 20 years (TYP).
Each block can withstand a minimum of 100,000 erase cycles.