MT28EW01GABA1LJS-0SIT TR The Micron Technology MT28EW01GABA1LJS-0SIT TR is a 1Gb Parallel NOR Flash memory. It operates at 2.7V to 3.6V with a 95ns access time and an industrial temperature range.
Mfr Part #:

MT28EW01GABA1LJS-0SIT TR

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology MT28EW01GABA1LJS-0SIT TR is a 1Gb Parallel NOR Flash memory. It operates at 2.7V to 3.6V with a 95ns access time and an industrial temperature range.
✓ Total Stock: 7,957 pcs
$ Price Range: $1.28

MT28EW01GABA1LJS-0SIT TR Available from 1 distributor

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MT28EW01GABA1LJS-0SIT TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Density
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Voltage
Write Cycle Time

MT28EW01GABA1LJS-0SIT TR Description

Short technical summary and product information.

The MT28EW01GABA1LJS-0SIT TR from Micron Technology is a 1 Gigabit Parallel NOR Flash memory, part of their Advanced Parallel NOR Flash family. This device offers a density of 1Gb and utilizes a single-level cell (SLC) process technology.

 

Key electrical specifications include a supply voltage range of 2.7V to 3.6V for VCC and 1.65V to VCC for VCCQ I/O buffers. It features asynchronous random and page reads with a page access time of 20ns and a random access time of 95ns. The memory interface is parallel, supporting x8/x16 data bus configurations. Program and erase operations are supported, with a word/byte program time of 25µs (TYP) and a 128KB block erase time of 0.2s (TYP).

 

Designed for reliability, the MT28EW01GABA1LJS-0SIT TR boasts 100,000 minimum erase cycles per block and 20 years of typical data retention. It operates within an ambient temperature range of -40°C to +85°C, making it suitable for industrial applications. The device supports various features like program/erase suspend and resume, unlock bypass, block erase, chip erase, and write-to-buffer capabilities. It also includes BLANK CHECK and CYCLIC REDUNDANCY CHECK (CRC) operations.

 

This Parallel NOR Flash memory is available in a 56-pin TSOP package measuring 14 x 20mm. It is RoHS-compliant and offered in halogen-free packaging, aligning with environmental standards. The device is ideal for high-performance boot, code storage, and data logging applications in automotive, industrial, and networking environments.

MT28EW01GABA1LJS-0SIT TR Quick Information

Product Type: Parallel NOR Flash Memory
Canonical Name: Micron Technology MT28EW01GABA1LJS-0SIT TR 1Gb Parallel NOR Flash Memory
Subcategory: Parallel NOR Flash

MT28EW01GABA1LJS-0SIT TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

MT28EW01GABA1LJS-0SIT TR Estimated Pricing

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1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

MT28EW01GABA1LJS-0SIT TR Features

  • 1Gb density Parallel NOR Flash memory.
  • Operates from 2.7V to 3.6V supply.
  • Fast 95ns random access time.
  • Wide -40°C to 85°C industrial temperature range.
  • High endurance with 100,000 P/E cycles.

MT28EW01GABA1LJS-0SIT TR Applications

  • Ideal for high-performance boot applications.
  • Suitable for code storage requirements.
  • Used in data logging applications.
  • Designed for automotive environments.
  • Applicable in industrial systems.

MT28EW01GABA1LJS-0SIT TR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the supply voltage range of the MT28EW01GABA1LJS-0SIT TR?

The supply voltage range is 2.7V to 3.6V for program, erase, and read operations.

What packages are available for this part?

Available in 56-TSOP (14x20mm), 56-TFSOP (0.724", 18.40mm width), and 64-ball LBGA (11x13mm).

What is the operating temperature range?

The ambient operating temperature range is -40°C to +85°C.

What is the memory organization?

Organized as 128M x8 or 64M x16 with uniform 128KB (or 64KW) blocks.

What is the access time?

Random access time is 95ns (at 2.7-3.6V) or 100ns (at 1.65V-VCC). Page access time is 20ns.

How many erase cycles are supported?

Minimum 100,000 program/erase cycles per block. Data retention of 20 years.

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